Liberal Scientific Technologies Announces World’s First GaN-on-Silicon Terahertz Structure for Next-Gen Semiconductors
Liberal Scientific Technologies has achieved a world-first breakthrough in semiconductor design by successfully developing a Terahertz GaN-on-Silicon wafer structure, setting a new industry benchmark for high-frequency, low-power semiconductor devices.
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Liberal Scientific Technologies Partners with Leading EV Manufacturer to Develop Next-Generation GaN Power Modules
We are thrilled to announce our partnership with a leading global EV manufacturer to integrate high-efficiency GaN-based power modules into next-generation electric vehicles and ultra-fast charging stations.
Liberal Scientific Technologies to Present at Global Semiconductor Innovation Summit 2025
Our Chief Technology Officer (CTO) will be presenting our latest advancements in semiconductor AI integration, GaN power solutions, and sustainability-driven chip manufacturing at the Global Semiconductor Innovation Summit 2025.
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With an unwavering commitment to sustainability, innovation, and superior engineering, we push the boundaries of what semiconductors can achieve.
By integrating Artificial Intelligence (AI) into semiconductor chip design, we are revolutionizing how chips are fabricated, optimized, and deployed for the automotive, aerospace, telecommunications, renewable energy, and consumer electronics sectors.
