Liberal Scientific Technologies Announces World’s First GaN-on-Silicon Terahertz Structure for Next-Gen Semiconductors

Liberal Scientific Technologies has achieved a world-first breakthrough in semiconductor design by successfully developing a Terahertz GaN-on-Silicon wafer structure, setting a new industry benchmark for high-frequency, low-power semiconductor devices.

Key Highlights:

✔Revolutionary Terahertz GaN-on-Si technology for high-speed computing & 6G applications.
✔Patent secured for breakthrough fabrication methodology.
✔Enabling next-gen communication, space tech, and ultra-fast computing.